2SB1647 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Part Name

Description

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2SB1647

Silicon PNP Darlington Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Darlington Power Transistor 2SB1647

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -10mA

VBE(sat) Base-Emitter Saturation Voltage

IC= -10A; IB= -10mA

ICBO

Collector Cutoff Current

VCB= -150V ; IE= 0

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

hFE

DC Current Gain

IC= -10A ; VCE= -4V

COB

Output Capacitance

IE= 0; VCB= -10V; ftest= 1MHz

fT

Current-Gain—Bandwidth Product

IE= 2A ; VCE= -12V

Switching Times

ton

Turn-on Time

tstg

Storage Time

tf

Fall Time

VCC= -40V, RL= 4Ω,

IC= -10A; IB1= -IB2= -10mA,

MIN TYP. MAX UNIT

-150

V

-2.5 V

-3.0 V

-100 μA

-100 μA

5000

320

pF

45

MHz

0.7

μs

1.6

μs

1.1

μs

 hFE Classifications

O

P

Y

5000-12000 6500-20000 15000-30000

SPTECH website：www.superic-tech.com

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