MP111 View Datasheet(PDF) - Monolithic Power Systems
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MP111 Datasheet PDF : 13 Pages
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MP111 – DYING GASP STORAGE AND RELEASE CONTROL IC
ELECTRICAL CHARACTERISTICS
VIN = 12V, TA = 25C, unless otherwise noted.
Parameter
Symbol Condition
Input Supply Voltage Range
Supply Current (Shutdown)
Supply Current (Quiescent)
VIN Under Voltage Lockout
Threshold Rising
VIN
IIN
IIN
INUVVth
VEN = 0V
VEN = 2V, VFB = 1.1V
VIN Under Voltage Lockout
Threshold Hysteresis
INUVHYS
Feedback Voltage
Vstorage
Threshold-High
Refresh
VFB
VFB1_H
Vstorage
Threshold-Low
Refresh
VFB1_L
Vstorage
Refresh
Threshold-Hysteresis
VFB1_Hys
Feedback Current
GASP High Threshold
IFB
VTHGASP
VFB1= VFB2=1V
GASP Low Threshold
VTLGASP
Min
Typ
Max Units
4.5
18
V
1
μA
300
μA
3.0
3.5
4.0
V
0.95
350
mV
1
1.05
V
VFB+0.025 VFB+0.05 V
VFB-0.05 VFB-0.025
V
50
10
1.05
1
mV
nA
VFB2
VFB2
GASP Delay
GASPTd
2
μs
GASP Sink Current
Capability
VGASP
Sink 4mA
0.4
V
GASP Leakage Current
IGASP_LEAK VGASP=3.3V
10
nA
Input Inrush Current Limit
for Charging Storage
Capacitor
IPRECHARGE_LIMIT
VIN=12V,
Charging
CSTORAGE from 0 to VIN
0.25
A
Current limit for Dumping
Charge from CSTORAGE to
VIN
Thermal Shutdown (5)
Thermal
Hysteresis (5)
Shutdown
IDUMP_LIMIT
TSD
THYS
2.5
A
150
ºC
30
ºC
Notes:
5) Guaranteed by design.
MP111 Rev. 1.0 1
www.MonolithicPower.com
4
4/25/2018
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