FS5UM-10 View Datasheet(PDF) - Renesas Electronics
Part Name
Description
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FS5UM-10 Datasheet PDF : 7 Pages
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ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
40
TC = 25°C
Pulse Test
32
24
ID = 10A
16
7A
5A
8
3A
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
10
TC = 25°C
VDS = 50V
Pulse Test
8
6
4
2
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
103
7
Ciss
5
3
2
102
7
5
Coss
3
2
101
Crss
7 Tch = 25°C
5 f = 1MHz
VGS = 0V
3
23
5 7 100 2 3
5 7 101 2 3
5 7 102 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Nch POWER MOSFET
FS5UM-10
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
10
TC = 25°C
Pulse Test
8
6
4
VGS = 10V
20V
2
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
101
7
VDS = 10V
Pulse Test
5
TC = 25°C
3
2
100
7
125°C 75°C
5
3
2
10–1
10–1 2 3 5 7 100 2 3 5 7 101
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
103
7
5
3 tf
Tch = 25°C
VDD = 200V
VGS = 10V
RGEN = RGS = 50Ω
2
td(off)
102
7
5
3
2 td(on)
tr
101
10–1 2 3
5 7 100
23
5 7 101
DRAIN CURRENT ID (A)
Feb.1999
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