2N5758 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
Part Name
Description
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2N5758 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A
VBE(on) Base-Emitter On Voltage
IC= 3A ; VCE= 2V
ICEO
Collector Cutoff Current
ICEX
Collector Cutoff Current
ICBO
Collector Cutoff Current
VCE= 50V; IB= 0
VCE= 100V; VBE(off)= -1.5V
VCE= 100V; VBE(off)= -1.5V, TC=150℃
VCB= 100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7.0V; IC= 0
hFE-1
DC Current Gain
IC= 3A ; VCE= 2V
hFE-2
DC Current Gain
IC= 6A ; VCE= 2V
fT
Current Gain-Bandwidth Product
IC= 0.5A; VCE= 20V; f= 0.5MHz
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 0.1MHz
2N5758
MIN MAX UNIT
100
V
1.0
V
2.0
V
1.5
V
1.0 mA
1.0
5.0
mA
1.0 mA
1.0 mA
25 100
5
1.0
MHz
300 pF
SPTECH website：www.superic-tech.com
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