2N6055 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
Part Name
Description
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2N6055 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Darlingtion Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 16mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 80mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 8A; IB= 80mA
VBE(on) Base-Emitter On voltage
IC= 4A ; VCE= 3V
ICEO
Collector Cutoff current
ICEX
Collector Cutoff current
IEBO
Emitter Cut-off current
VCE= 30V; IB= 0
VCE= 60V;VBE(off)= -1.5V
VCE= 60V;VBE(off)= -1.5V,TC=150℃
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 4A ; VCE= 3V
hFE-2
DC Current Gain
IC= 8A ; VCE= 3V
COB
Output Capacitance
IE=0 ; VCB= 10V;ftest= 0.1MHz
2N6055
MIN MAX UNIT
60
V
2.0
V
3.0
V
4.0
V
2.8
V
0.5
mA
0.5
5.0
mA
2.0
mA
750 18000
100
220
pF
SPTECH website：www.superic-tech.com
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