SSF3610E View Datasheet(PDF) - GOOD-ARK

Part Name

Description

View to exact match

SSF3610E

25V N-Chanel MOSFET

GOOD-ARK 

SSF3610E

25V N-Chanel MOSFET

Electrical Characteristics @TA=25℃ unless otherwise specified

Symbol Parameter

V(BR)DSS Drain-to-Source breakdown voltage

RDS(on) Static Drain-to-Source on-resistance

VGS(th)

IDSS

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

Ciss

Coss

Crss

Gate threshold voltage

Drain-to-Source leakage current

Gate-to-Source forward leakage

Total gate charge

Gate-to-Source charge

Gate-to-Drain("Miller") charge

Turn-on delay time

Rise time

Turn-Off delay time

Fall time

Input capacitance

Output capacitance

Reverse transfer capacitance

Min.

25

—

—

—

1

—

—

—

—

—

—

—

—

—

—

—

—

—

Typ.

—

6.8

7.6

10.4

1.3

—

—

—

15.4

3.6

5.8

6.6

4.6

33.0

20.3

1260

353

295

Max.

—

10

12

14

2.5

1

10

-10

—

—

—

—

—

—

—

—

—

—

Units

V

mΩ

V

μA

μA

nC

ns

pF

Conditions

VGS = 0V, ID = 250μA

VGS =10V, ID =5A

VGS =8V, ID =6A

VGS =4.5V, ID =4A

VDS = VGS, ID = 250μA

VDS = 25V,VGS = 0V

VGS = 10V

VGS = -10V

ID = 4A,

VDS=10V,

VGS = 4.5V

VGS=10V, VDS=10V,

RL=10Ω,

RGEN=3Ω

VGS = 0V

VDS = 10V

ƒ = 1MHz

Source-Drain Ratings and Characteristics

Symbol

IS

ISM

VSD

trr

Qrr

Parameter

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode)

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Min. Typ. Max.

—

—

18

—

—

72

—

0.75 0.9

—

10.5

—

—

2.6

—

Units

A

A

V

ns

uC

Conditions

MOSFET symbol

showing the

integral reverse

p-n junction diode.

IS=1.7A, VGS=0V

TJ = 25°C, IF =15A,

di/dt = 100A/μs

www.goodark.com

Page 2 of 6

Rev.2.1

Share Link: