BAW156 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
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BAW156 Datasheet PDF : 9 Pages
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NXP Semiconductors
Low-leakage double diode
Product data sheet
BAW156
FEATURES
• Plastic SMD package
• Low leakage current: typ. 3 pA
• Switching time: typ. 0.8 μs
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
max. 500 mA.
APPLICATION
• Low-leakage current applications in
surface mounted circuits.
DESCRIPTION
Epitaxial, medium-speed switching,
double diode in a small SOT23 plastic
SMD package. The diodes are in
common anode configuration.
PINNING
PIN
1
2
3
cathode
cathode
common anode
DESCRIPTION
handbook, 4 columns 2
1
3
Top view
2
1
3
MAM206
Marking code: JZp = made in Hong Kong; JZt = made in Malaysia.
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
Per diode
VRRM
VR
IF
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
IFRM
repetitive peak forward current
IFSM
non-repetitive peak forward
current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
−
−
single diode loaded; note 1; see Fig.2 −
double diode loaded; note 1; see Fig.2 −
−
square wave; Tj = 25 °C prior to surge;
see Fig.4
tp = 1 μs
−
tp = 1 ms
−
tp = 1 s
−
Tamb ≤ 25 °C; note 1
−
−65
−
Note
1. Device mounted on a FR4 printed-circuit board.
MAX.
85
75
160
140
500
4
1
0.5
250
+150
150
UNIT
V
V
mA
mA
mA
A
A
A
mW
°C
°C
1999 May 11
2
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