BAW156 View Datasheet(PDF) - Siemens AG

Part Name

Description

View to exact match

BAW156

Silicon Low Leakage Diode Array

Siemens AG 

BAW 156

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC characteristics

Breakdown voltage

I(BR) = 100 µA

Forward voltage

IF = 1 mA

IF = 10 mA

IF = 50 mA

IF = 150 mA

Reverse current

VR = 70 V

VR = 70 V, TA = 150 ˚C

AC characteristics

Diode capacitance

VR = 0, f = 1 MHz

Reverse recovery time

IF = 10 mA, IR = 10 mA, RL = 100 Ω

measured at IR = 1 mA

Test circuit for reverse recovery time

Symbol

Values

Unit

min. typ. max.

V(BR)

70

–

VF

–

–

–

–

–

–

–

–

IR

–

–

–

–

–

V

mV

900

1000

1100

1250

nA

5

80

CD

–

2

–

pF

trr

–

0.5 3

µs

Pulse generator: tp = 5 µs, D = 0.05

tr = 0.6 ns, Rj = 50 Ω

Oscillograph: R = 50 Ω

tr = 0.35 ns

C ≤ 1 pF

Semiconductor Group

2

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