TF21920B View Datasheet(PDF) - Dynex Semiconductor
Part Name
Description
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TF21920B Datasheet PDF : 13 Pages
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DYNAMIC CHARACTERISTICS
TF219..B
Symbol
Parameter
Conditions
Min. Max. Units
VTM
Maximum on-state voltage
At 150A peak, T = 25oC
case
-
IRRM/IDRM Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125oC
-
dV/dt Maximum linear rate of rise of off-state voltage Linear to 60% V T = 125oC, Gate open circuit -
DRM j
dI/dt Rate of rise of on-state current
Gate source 20V, 20Ω
tr ≤ 0.5µs, Tj = 125˚C
Repetitive 50Hz -
Non-repetitive -
VT(TO)
Threshold voltage
At Tvj = 125oC
-
rT
On-state slope resistance
At Tvj = 125oC
-
tgd
t(ON)TOT
Delay time
Total turn-on time
Tj = 25˚C, IT = 100A,
-
VD = 50V, IG = 1A,
dI/dt = 50A/µs, dIG/dt = 1A/µs
-
I
Holding current
H
T = 25oC, I = 1A, V = 12V
-
j
TM
D
t
Turn-off time
q
*Typical value.
T = 125˚C, I = 100A, V =
j
T
R
dV/dt = 200V/µs (Linear to
50V,
60%
V ),
DRM
tq
code:
B
-
dI /dt
R
=
30A/µs,
Gate
open
circuit
2.75 V
15 mA
200 V/µs
500 A/µs
800 A/µs
2.0
V
5.0 mΩ
3*
µs
1.5* µs
60 mA
40
µs
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
V
GT
IGT
V
GD
VRGM
IFGM
P
GM
P
G(AV)
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Conditions
V
DRM
=
12V,
T
case
=
25oC,
R
L
=
6Ω
VDRM = 12V, Tcase = 25oC, RL = 6Ω
At
V
DRM
T
case
=
125oC,
R
L
=
1kΩ
Anode positive with respect to cathode
Typ. Max. Units
-
3.0
V
-
200 mA
-
0.2
V
-
5.0
V
-
4
A
-
16
W
-
3
W
3/13
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