MJD32CT4 View Datasheet(PDF) - Secos Corporation.
Part Name
Description
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MJD32CT4 Datasheet PDF : 2 Pages
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Elektronische Bauelemente
MJD32C
-3A, -100V
P P Epitaxial Silicon Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
Designed for General Purpose Amplifier and Low
Speed Switching Applications
Lead Formed for Surface Mount Applications in
Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Electrically Similar to Popular TIP31 and TIP32 Series
TO-252 (D-Pack)
A
B
C
D
PACKAGE INFORMATION
Package
MPQ
Leader Size
GE
TO-252
2.5K
13 inch
Collector
2
1
Base
3
Emitter
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
K HF
N
O
P
M
J
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 6.35 6.9 J
2.3 REF.
B 4.95 5.53 K 0.89 REF.
C 2.1 2.5 M 0.45 1.14
D 0.41 0.9 N
1.55 Typ.
E6
7.5 O 0 0.13
F
2.90 REF
P 0.58 REF.
G 5.4 6.4
H 0.6 1.2
Rating
Unit
Collector to Base Voltage
VCBO
-100
V
Collector to Emitter Voltage
Emitter to Base Voltage
VCEO
-100
V
VEBO
-5
V
Collector Current
Collector Power Dissipation
Junction and Storage Temperature
IC
-3
A
PC
1.25
W
TJ, TSTG
150, -65 ~ 150
°C
CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage 1
V(BR)CBO
VCEO(sus)
Emitter-Base Breakdown Voltage
V(BR)EBO
Collector Cut-Off Current
ICES
Collector Cut-Off Current
ICEO
Emitter Cut-Off Current
IEBO
DC Current Gain
hFE(1)
hFE(2)
Collector-Emitter Saturation Voltage
VCE(Sat)
Base-Emitter Voltage
VBE(Sat)
Transition Frequency
fT
Notes:
1. Pulse Test: Pulse width≦300µs, duty cycle≦2%
-100
-100
-5
-
-
-
25
15
-
-
3
http://www.SeCoSGmbH.com/
07-Jun-2017 Rev. A
Max.
-
-
-
-20
-50
-1
-
75
-1.2
-1.8
-
Unit
V
V
V
uA
uA
mA
MHz
Test Condition
IC= -1mA, IE=0
IC= -30mA, IB=0
IE= -1mA, IC=0
VCE= -100V, VEB=0
VCE= -60V, IB=0
VEB= -5V, IC=0
VCE= -4V, IC= -1A
VCE= -4V, IC= -3A
IC= -3A, IB= -0.375A
VCE= -4V, IC= -3A
VCE= -10V, IC= -0.5A, fT=1KHz
Any changes of specification will not be informed individually.
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