Electrical Characteristics TA=25°C
LED Emitter
Forward Voltage
Reverse Current
VF Temperature Coefficient
Junction Capacitance
Dynamic Resistance
Switching Time IL358/9
Detector
Junction Capacitance
NEP
AC Characteristics Photovoltaic Mode
Frequency Response
IL358/9
Phase Response
Rise Time
Package
Input-Output Capacitance
Common Mode Capacitance
Coupled Characteristics
Symbol
VF
IR
∆VF/∆°C
CJ
∆VF/∆IF
tf
tr
Min.
—
—
—
—
—
—
—
CJ
—
—
—
BW(–3dB) —
—
—
—
—
CIO
—
Ccm
—
IL350
IL351
IL358
IL359
Typ.
1.8
.01
–2.2
TBD
6.0
40
40
Max.
2.1
10
—
—
—
—
—
Units
V
µA
mV/°C
pF
W
ns
ns
12
—
<4 –14
—
pF
W/√Hz
1.0
—
45
—
350
—
MHz
Deg.
ns
1.0
—
pF
0.5
—
pF
K1 at IF=2.0 mA, VD=0 V
Min.
Typ.
Max.
0.003
—
—
0.005
—
—
0.008
—
—
0.008
—
—
Test Conditions
IF=10 mA
VR=3.0 V
—
VF=0 V, f=1.0 MHz
IF=2.5 mA
∆IF=1.0 mA
VF=0 V, f=1.0 MHz
VDET=0 V
IP1=25 µA
Modulation current
∆IP1=±6.0 µA
VF=0 V, f=1.0 MHz
VF=0 V, f=1.0 MHz
K3 Bins
A–J
D, E, F, G
C,D, E, F, G, H
E, F
Bin Table
Bin Min.
A
0.557
B
0.620
C
0.690
D
0.765
E
0.851
F
0.945
G
1.051
H
1.169
I
1.297
J
1.442
Max.
0.626
0.696
0.773
0.859
0.955
1.061
1.181
1.311
1.456
1.618
Infineon Technologies, Corp. • Optoelectronics Division • Cupertino, CA (formerly Siemens Microelectronics, Inc.)
www.infineon.com/opto • 1-800-777-4363
2
IL350/351/358/359
April 29. 1999