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IL256AT(1999) View Datasheet(PDF) - Infineon Technologies

Part Name
Description
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IL256AT Datasheet PDF : 3 Pages
1 2 3
g
y,
,
Figure 9. Normalized HFE versus Ib, Ta
1.2
Normalized to:
Ib = 10µA
1.0
Ta = 25°C
Vce = 10V
0.8
NHFE -20°C
NHFE 25°C
0.6
NHFE 50°C
NHFE 70°C
0.4
1
10
100
Ib - Base Current - µA
1000
Figure 10. Normalized saturated HFE versus Ib
1.5
Normalized to:
HFE at Vce = 10V, Icb = 10µA
Ta = 25°C
1.0
Ta = -20°C
Ta =25°C
Ta = 50°C
Ta = 70°C
0.5
Vce(sat) = 0.4V
0.0
1
10
100
Ib - Base Current - µA
1000
Figure 11. Base emitter voltage versus base current
1000
100
Ta = 25°C
10
1
.1
.01
.001
0.4
0.5
0.6
0.7
0.8
Vbe - Base Emitter Voltage - V
Figure 12. Collector-emitter leakage current versus
temperature
10 5
10 4
10 3
10 2
10 1
Vce = 10V
10 0
TYPICAL
10 -1
10 -2
-20
0
20
40
60
80
100
Ta - Ambient Temperature - °C
Infineon Technologies, Corp. • Optoelectronics Division • Cupertino, CA (formerly Siemens Microelectronics, Inc.)
www.infineon.com/opto • 1-800-777-4363
3
IL256AT
April 29, 1999

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