FM200TU-3A View Datasheet(PDF) - MITSUBISHI ELECTRIC
Part Name
Description
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FM200TU-3A Datasheet PDF : 5 Pages
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GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
ID = 100A
16
VDD = 60V VDD = 80V
12
8
4
0
0 200 400 600 800 1000 1200
GATE CHARGE QG (nC)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
7
5
td(off)
3
td(on)
2
tr
102
7
5
3
2
101
101
23
tf
5 7 102
Conditions:
VDD = 80V
VGS = ±15V
RG = 13Ω
Tch = 125°C
Inductive load
2 3 5 7 103
DRAIN CURRENT ID (A)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
101
7
5
3
2
100
7
5 Eon
3
2
10–1
7
5
3 Eoff
2
10–2
101 2 3
Err
5 7 102
Conditions:
VDD = 80V
VGS = ±15V
RG = 13Ω
Tch = 125°C
Inductive load
2 3 5 7 103
DRAIN CURRENT ID (A)
4
MITSUBISHI <MOSFET MODULE>
FM200TU-3A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
Chip
103
7 VGS = 0V
5
3
Tch = 125°C Tch = 25°C
2
102
7
5
3
2
101
0.5 0.6 0.7 0.8 0.9 1.0
SOURCE-DRAIN VOLTAGE VSD (V)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
104
7
5
3
td(off)
2
td(on)
103
7
tr
5
3
2
102
7
5
3
2
101
0
tf
Conditions:
VDD = 80V
VGS = ±15V
ID = 100A
Tch = 125°C
Inductive load
20 40 60 80 100 120 140
GATE RESISTANCE RG (Ω)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
101
7
Eon
5
3
Eoff
2
100
7
5
Err
3
2
10–1
7
5
3
2
Conditions:
VDD = 80V
VGS = ±15V
ID = 100A
Tch = 125°C
Inductive load
10–2
0 20 40 60 80 100 120 140
GATE RESISTANCE RG (Ω)
Feb. 2009
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