ZTX855(1994) View Datasheet(PDF) - Diodes Incorporated.

Part Name

Description

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ZTX855
(Rev.:1994)

NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR

Diodes Incorporated. 

ZTX855

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)

PARAMETER

SYMBOL MIN. TYP. MAX.

Base-Emitter

Turn-On Voltage

VBE(on)

0.88 1

Static Forward

Current Transfer

Ratio

hFE

100 200

100 200 300

35

55

10

Transition Frequency

fT

90

UNIT

V

MHz

Output Capacitance

Cobo

22

pF

Switching Times

ton

toff

66

ns

2130

ns

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

CONDITIONS.

IC=4A, VCE=5V*

IC=10mA, VCE=5V

IC=1A, VCE=5V*

IC=4A, VCE=5V*

IC=10A, VCE=5V*

IC=100mA, VCE=10V

f=50MHz

VCB=20V, f=1MHz

IC=1A, IB!=100mA

IB2=100mA, VCC=50V

THERMAL CHARACTERISTICS

PARAMETER

Thermal Resistance: Junction to Ambient

Junction to Case

SYMBOL

Rth(j-amb)

Rth(j-case)

MAX.

150

50

UNIT

°C/W

°C/W

4.0

3.0

2.0

1.0

AmbientCtaesme tpemerpaetruatruere

-40 -20 0 20 40 60 80 100 120 140 160 180 200

T -Temperature (°C)

Derating curve

150

D.C.

t1 D=t1/tP

100

tP

D=0.6

50

D=0.2

D=0.1

D=0.05

0

Single Pulse

0.0001 0.001 0.01 0.1

1

10

100

Pulse Width (seconds)

Maximum transient thermal impedance

3-301

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