DF65434 View Datasheet(PDF) - Dynex Semiconductor
Part Name
Description
View to exact match
DF65434 Datasheet PDF : 7 Pages
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DF654
SURGE RATINGS
Symbol
Parameter
I
Surge (non-repetitive) forward current
FSM
I2t
I2t for fusing
IFSM
Surge (non-repetitive) forward current
I2t
I2t for fusing
THERMAL AND MECHANICAL DATA
Symbol
Parameter
R
th(j-c)
Thermal resistance - junction to case
R
Thermal resistance - case to heatsink
th(c-h)
Tvj
Virtual junction temperature
Tstg
Storage temperature range
-
Clamping force
CHARACTERISTICS
Symbol
Parameter
VFM
Forward voltage
IRRM
Peak reverse current
trr
Reverse recovery time
Q
RA1
Recovered charge (50% chord)
I
Reverse recovery current
RM
K
Soft factor
VTO
r
T
VFRM
Threshold voltage
Slope resistance
Forward recovery voltage
Conditions
10ms half sine; with 0% VRRM, Tj = 150oC
10ms half sine; with 50% VRRM, Tj = 150oC
Max. Units
6.0
kA
180 x 103 A2s
4.8
kA
115 x 103 A2s
Conditions
Double side cooled
dc
Single side cooled
Anode dc
Cathode dc
Clamping force 10kN
with mounting compound
Double side
Single side
Forward (conducting)
Min. Max. Units
- 0.045 oC/W
- 0.086 oC/W
- 0.095 oC/W
-
0.01 oC/W
-
0.02 oC/W
-
150
oC
-55 150
oC
9.0 11.0 kN
Conditions
At 1500A peak, Tcase = 25oC
At VRRM, Tcase = 150oC
IF = 1000A, diRR/dt = 100A/µs
Tcase = 150oC, VR = 100V
At T = 150oC
vj
At T = 150oC
vj
di/dt
=
1000A/µs,
T
j
=
125oC
Typ. Max. Units
-
2.4
V
-
60 mA
-
6.5 µs
-
900 µC
-
300
A
-
-
-
-
1.1
V
-
0.9 mΩ
-
-
V
2/7
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