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DFM900FXM18-A000(2001) View Datasheet(PDF) - Dynex Semiconductor

Part Name
Description
View to exact match
DFM900FXM18-A000
(Rev.:2001)
Dynex
Dynex Semiconductor Dynex
DFM900FXM18-A000 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
DFM900FXM18-A000
STATIC ELECTRICAL CHARACTERISTICS - PER ARM
Tvj = 25˚C unless stated otherwise.
Symbol
Parameter
Test Conditions
IRM
Peak reverse current
V
Forward voltage
F
L
Inductance
VR = 1800V, Tvj = 125˚C
IF = 900A
IF = 900A, Tvj = 125˚C
-
STATIC ELECTRICAL CHARACTERISTICS
Tvj = 25˚C unless stated otherwise.
Symbol
Parameter
L
Module inductance
M
(externally connected in parallel)
Test Conditions
-
DYNAMIC ELECTRICAL CHARACTERISTICS - PER ARM
Tvj = 25˚C unless stated otherwise.
Symbol
Parameter
Test Conditions
Irr
Peak reverse recovery current
Qrr
Reverse recovery charge
E
Reverse recovery energy
rec
IF = 900A,
dIF/dt = 6000A/µs,
V = 900V
R
Tvj = 125˚C unless stated otherwise.
Symbol
Parameter
Irr
Peak reverse recovery current
Qrr
Reverse recovery charge
E
Reverse recovery energy
rec
Test Conditions
I = 900A,
F
dIF/dt = 6000A/µs,
VR = 900V
Min. Typ. Max. Units
-
-
15 mA
-
2.0
2.3
V
-
2.0
2.3
V
-
20
-
nH
Min.
-
Typ.
15
Max. Units
-
nH
Min.
-
-
-
Typ.
660
240
180
Max. Units
-
A
-
µC
-
mJ
Min. Typ. Max. Units
-
765
-
A
-
410
-
µC
-
270
-
mJ
3/7
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