BDP950 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
View to exact match
BDP950 Datasheet PDF : 8 Pages
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DC current gain hFE = ƒ(IC)
VCE = 2 V
10 3
-
10 2
100 °C
25 °C
-50 °C
BDP948_BDP950_BDP954
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 10
10 4
mA
10 3
100°C
10 2
25°C
-50°C
10 1
10
1
10
0
10 1
10 2
10 3 mA 10 4
IC
Base-emitter saturation voltage
IC = (VBEsat), hFE = 10
10 0
0
0.1 0.2 0.3 0.4
Collector current IC = ƒ(VBE)
VCE = 2 V
V
0.6
VCEsat
10 4
mA
10 4
mA
10 3
10 3
-50°C
-50°C
25°C
25°C
100°C
10 2
100°C
10 2
10 1
10 1
10 0
0
0.2 0.4 0.6 0.8
1 V 1.3
VBEsat
10 0
0
0.2 0.4 0.6 0.8
1 V 1.3
VBE
4
2011-10-05
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