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Part Name
Description
BDP954(2008) View Datasheet(PDF) - Infineon Technologies
Part Name
Description
View to exact match
BDP954
(Rev.:2008)
PNP Silicon AF Power Transistors
Infineon Technologies
BDP954 Datasheet PDF : 8 Pages
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DC current gain
h
FE
=
ƒ
(
I
C
)
V
CE
= 2 V
10
3
-
10
2
100 °C
25 °C
-50 °C
BDP948, BDP950, BDP954
Collector-emitter saturation voltage
I
C
=
ƒ
(
V
CEsat
),
h
FE
= 10
10
4
mA
10
3
100°C
10
2
25°C
-50°C
10
1
10
1
10
0
10
1
10
2
10
3
mA
10
4
I
C
Base-emitter saturation voltage
I
C
= (
V
BEsat
),
h
FE
= 10
10
0
0
0.1 0.2 0.3 0.4
Collector current
I
C
=
ƒ
(
V
BE
)
V
CE
= 2 V
V
0.6
V
CEsat
10
4
mA
10
4
mA
10
3
10
3
-50°C
-50°C
25°C
25°C
100°C
10
2
100°C
10
2
10
1
10
1
10
0
0
0.2 0.4 0.6 0.8
1
V
1.3
V
BEsat
10
0
0
0.2 0.4 0.6 0.8
1
V
1.3
V
BE
4
2008-10-10
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