BDY54 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
View to exact match
BDY54 Datasheet PDF : 2 Pages
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<zEs.mL-don.au.ctot Lpioaucti, Line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BDY54
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEO(susr 120V(Min.)
• Collector-Emitter Saturation Voltage-
:VCE(«t)=1.1V(Max)@lc = 4A
• High Switching Speed
APPLICATIONS
• Designed for general-purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25"C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
180
V
VCEO Collector-Emitter Voltage
120
V
VEBO Em itter-Base Voltage
7
V
Ic
Collector Current-Continuous
12
A
IB
Base Current
5
A
PC
Collector Power Dissipation@Tc=25°C 60
W
Tj
Junction Temperature
Tstg
Storage Temperature
200
'C
-65-200 •c
-.«£
3
PIN
l.BASE
2. EMITTER
3. COLLECT OR (CASE)
TO-3 package
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DIM MM f MAX
A
3900
B 25-30 286?
c
7.30 8.30
D 090 1 10
£
1 40 T.60
Q
1092
H
5.46
K
L
11.40 1350
1675 iros
H 19.40 1962
g
400 420
u 90X10 3020
V
430 450
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensionswithout
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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