NPN Silicon AF Power Transistors
• For AF drivers and output stages
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Complementary type: BDP952...BDP956 (PNP)
BDP 951
Type
BDP 951
BDP 953
BDP 955
Marking Ordering Code
BDP 951 Q62702-D1339
BDP 953 Q62702-D1341
PDP 955 Q62702-D1343
Pin Configuration
1=B 2=C 3=E
1=B 2=C 3=E
1=B 2=C 3=E
4=C
4=C
4=C
Package
SOT-223
SOT-223
SOT-223
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
BDP 951
VCEO
BDP 953
BDP 955
Collector-base voltage
BDP 951
VCBO
BDP 953
BDP 955
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 99°C
Junction temperature
Storage temperature
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Thermal Resistance
Junction ambient 1)
RthJA
Junction - soldering point
RthJS
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Values
80
100
120
Unit
V
100
120
140
5
3
A
5
200
mA
500
3
W
150
°C
- 65 ... + 150
≤ 42
K/W
≤ 17
Semiconductor Group
1
Nov-28-1996