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Description
BB503M View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
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BB503M
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Hitachi -> Renesas Electronics
BB503M Datasheet PDF : 13 Pages
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BB503M
Drain Current vs. Gate1 Voltage
20
V
DS
= 5 V
R
G
= 68 k
Ω
16
12
2V
8
3V
4
VG2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V
G1
(V)
Forward Transfer Admittance
vs. Gate1 Voltage
30
V
DS
= 5 V
4 V
R
G
= 33 k
Ω
3V
24
f = 1 kHz
18
2V
12
6
VG2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V
G1
(V)
Forward Transfer Admittance
vs. Gate1 Voltage
30
V
DS
= 5 V
R
G
= 47 k
Ω
24
f = 1 kHz
4V
3V
2V
18
12
6
VG2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V
G1
(V)
Forward Transfer Admittance
vs. Gate1 Voltage
30
V
DS
= 5 V
R
G
= 68 k
Ω
24
f = 1 kHz
4V
3V
18
2V
12
6
VG2S = 1 V
0
1
2
3
4
5
Gate1 Voltage V
G1
(V)
6
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