MRF374A View Datasheet(PDF) - Freescale Semiconductor

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Description

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MRF374A

RF Power Field-Effect Transistor

Freescale Semiconductor 

Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Off Characteristics (1)

Drain - Source Breakdown Voltage

(VGS = 0 Vdc, ID =10 μA)

V(BR)DSS

70

—

—

Zero Gate Voltage Drain Current

(VDS = 32 Vdc, VGS = 0 Vdc)

IDSS

—

—

1

Gate - Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IGSS

—

—

1

On Characteristics

Gate Threshold Voltage (1)

(VDS = 10 V, ID = 200 μA)

Gate Quiescent Voltage (2)

(VDS = 32 V, ID = 100 mA)

Drain - Source On - Voltage (1)

(VGS = 10 V, ID = 3 A)

VGS(th)

2

VGS(Q)

2.5

VDS(on)

—

2.9

4

3.3

4.5

0.41

0.45

Dynamic Characteristics (1)

Input Capacitance

(VDS = 32 V, VGS = 0 V, f = 1 MHz)

Ciss

—

97.3

—

Output Capacitance

(VDS = 32 V, VGS = 0 V, f = 1 MHz)

Coss

—

49

—

Reverse Transfer Capacitance

(VDS = 32 V, VGS = 0 V, f = 1 MHz)

Crss

—

1.91

—

Functional Characteristics, Narrowband Operation (2) (In Freescale MRF374A Narrowband Circuit, 50 ohm system)

Common Source Power Gain

(VDD = 32 Vdc, Pout = 130 W PEP, IDQ = 400 mA,

f1 = 857 MHz, f2 = 863 MHz)

Gps

16

17.3

—

Drain Efficiency

(VDD = 32 Vdc, Pout = 130 W PEP, IDQ = 400 mA,

f1 = 857 MHz, f2 = 863 MHz)

η

36

41.2

—

Intermodulation Distortion

(VDD = 32 Vdc, Pout = 130 W PEP, IDQ = 400 mA,

f1 = 857 MHz, f2 = 863 MHz)

IMD

—

- 32.5

- 28

1. Each side of device measured separately.

2. Measurement made with device in push - pull configuration.

Unit

Vdc

μAdc

μAdc

Vdc

Vdc

Vdc

pF

pF

pF

dB

%

dB

MRF374A

2

RF Device Data

Freescale Semiconductor

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