GP1600FSS12 View Datasheet(PDF) - Dynex Semiconductor
Part Name
Description
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GP1600FSS12 Datasheet PDF : 11 Pages
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GP1600FSS12
CURVES
3200
2800
Common emitter
Tcase = 25˚C
Vge = 20/15/12/10V
2400
2000
1600
1200
800
400
0
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, Vce - (V)
Fig.5 Typical output characteristics
3200
2800
Common emitter
Tcase = 125˚C
Vge = 20/15/12/10V
2400
2000
1600
1200
800
400
0
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, Vce - (V)
Fig.6 Typical output characteristics
400
Conditions:
Tcase = 25˚C,
350 VCE = 600V,
VGE = 15V
A
300
250
200
B
150
C
100
50
A : Rg = 7Ω
B : Rg = 4.7Ω
C : Rg = 3.3Ω
0
0 200 400 600 800 1000 1200 1400 1600
Collector current, IC - (A)
Fig.7 Typical turn-on energy vs collector current
450
Conditions:
400
Tcase = 125˚C,
VCE = 600V,
A
VGE = 15V
350
300
B
250
C
200
150
100
50
0
0
A : Rg = 7Ω
B : Rg = 4.7Ω
C : Rg = 3.3Ω
200 400 600 800 1000 1200 1400 1600
Collector current, IC - (A)
Fig.8 Typical turn-on energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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