2SB1037 View Datasheet(PDF) - New Jersey Semiconductor

Part Name

Description

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2SB1037

Silicon PNP Power Transistor

New Jersey Semiconductor 

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

, One.

Silicon PNP Power Transistor

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

2SB1037

DESCRIPTION

• Collector-Emitter Breakdown Voltage-

: V(BR)CEo=-150V(Min.)

• Wide Area of Safe Operation

• Complement to Type 2SD1459

APPLICATIONS

• Designed for color TV vertical output, sound output

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25'C)

SYMBOL

PARAMETER

VALUE UNIT

VOBO Collector-Base Voltage

-150

V

VCEO Collector-Emitter Voltage

-150

V

VEBO Emitter-Base Voltage

-5

V

Ic

Collector Current-Continuous

-1.5

A

ICM

Collector Current-Peak

Total Power Dissipation

@ TC=25°C

PC

Total Power Dissipation

@ T3=25'C

Tj

Junction Temperature

-3

A

30

W

2

175

r

Tstg

Storage Temperature Range

-55-175 'C

, ."..„

2

1 ,,

1-1

FIH: 1 Base

2 Collector

3 Bitter

TO-220C package

j •«• B • H

^j *S

-« V H L "P

'yt ^cry

A

•-:>

IoTr. » »

K

f

-H

'* RK

c^

]

A

mm

Dlfi/ WIN MAX

A 15.50 15.90

B 9.90 10.20

C 4.20 4.50

D 0.70 0.90

F 3.40 3.70

G 4.98 5.18

H 2.68 2.90

J 0.44 0.60

K 13.00 13.40

L 1.10 1.45

Q 2.70 2.90

R 2.30 2.70

S 1.29 1.35

U 6.45 6.65

V 8.66 8.86

N.I Semi-Conductors reserves the right to change test conditions, parameter limits ;uid p;ick;ige dimensions without

notice. Infbrmiition furnished by N.I Semi-Conductors is believed to be both accuriite mid reliable fit the time of coi

lo press. I louever. NJ Seini-Condiietors nssumes no responsibility for ;my errors or omissions discovered in iis u-,e.

N.I Semi-CiMidinMors eiii'diiraues eusloniers to \erify that d.itusheels are current before placing orders.

Quality Semi-Conductors

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