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CY7C1041CV33 View Datasheet(PDF) - Cypress Semiconductor

Part Name
Description
View to exact match
CY7C1041CV33
Cypress
Cypress Semiconductor Cypress
CY7C1041CV33 Datasheet PDF : 12 Pages
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CY7C1041CV33
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on VCC to Relative GND[2] .... –0.5V to +4.6V
DC Voltage Applied to Outputs
in High-Z State[2] ....................................–0.5V to VCC + 0.5V
DC Input Voltage[2].................................–0.5V to VCC + 0.5V
Current into Outputs (LOW) .........................................20 mA
Static Discharge Voltage............. ...............................>2001V
(per MIL-STD-883, Method 3015)
Latch-up Current...................................................... >200 mA
Operating Range
Range
Commercial
Industrial
Automotive-A
Automotive-E
Ambient
Temperature
0°C to +70°C
–40°C to +85°C
–40°C to +85°C
–40°C to +125°C
VCC
3.3V ± 0.3V
DC Electrical Characteristics Over the Operating Range
-10
-12
-15
-20
Parameter Description
Test Conditions
Min. Max. Min. Max. Min. Max. Min. Max. Unit
VOH
VOL
VIH
VIL[2]
IIX
Output HIGH Voltage VCC = Min., IOH = –4.0 mA
Output LOW Voltage VCC = Min., IOL = 8.0 mA
Input HIGH Voltage
2.4
2.4
2.4
2.4
V
0.4
0.4
0.4
0.4 V
2.0 VCC 2.0 VCC 2.0 VCC 2.0 VCC V
+ 0.3
+ 0.3
+ 0.3
+ 0.3
Input LOW Voltage
–0.3 0.8 –0.3 0.8 –0.3 0.8 –0.3 0.8 V
Input Leakage
Current
GND < VI < VCC Com’l/Ind’l –1 +1 –1 +1 –1 +1 –1 +1 µA
Auto-A
–1 +1
–1 +1 µA
Auto-E
–20 +20 µA
IOZ
Output Leakage GND < VOUT < VCC, Com’l/Ind’l –1 +1 –1 +1 –1 +1 –1 +1 µA
Current
Output Disabled Auto-A
–1 +1
–1 +1 µA
Auto-E
–20 +20 µA
ICC
VCC Operating
VCC = Max.,
Com’l
Supply Current
f = fMAX = 1/tRC Ind’l
Auto-A
Auto-E
90
85
80
75 mA
100
95
90
85 mA
100
85 mA
90 mA
ISB1
Automatic CE
Max. VCC,
Com’l/Ind’l
40
40
40
40 mA
Power-down Current CE > VIH
—TTL Inputs
VIN > VIH or
Auto-A
40
40 mA
VIN < VIL, f = fMAX Auto-E
45 mA
ISB2
Automatic CE
Max. VCC,
Com’l/Ind’l
10
10
10
10 mA
Power-down Current CE > VCC – 0.3V,
—CMOS Inputs
VIN > VCC – 0.3V,
Auto-A
10
10 mA
or VIN < 0.3V, f = 0 Auto-E
15 mA
Capacitance[3]
Parameter
Description
Test Conditions
CIN
Input Capacitance
TA = 25°C, f = 1 MHz, VCC = 3.3V
COUT
I/O Capacitance
Notes:
2. VIL (min.) = –2.0V and VIH(max) = VCC + 0.5V for pulse durations of less than 20 ns.
3. Tested initially and after any design or process changes that may affect these parameters.
Max.
8
8
Unit
pF
pF
Document #: 38-05134 Rev. *H
Page 4 of 12
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