C5305 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
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C5305 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
2SC5305
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage IC=0.1A; IB=0
VcE(sat) Collector-Emitter Saturation Voltage lc= 3A; IB= 0.6A
VeE(sat) Base-Emitter Saturation Voltage
lc= 3A; IB= 0.6A
hpE-1
DC Current Gain
lc= 0.3A; VCE= 5V
hpE-2
DC Current Gain
lc= 2.5A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 600V IE= 0
ICES
Collector Cutoff Current
VOE= 1200V; RBE= 0
IEBO
Emitter Cutoff Current
VEB= 9V; lc= 0
Switching Times
ts
Storage Time
tf
Fall Time
!„- •} ^A-lr,^- n RA- !„„- 1 9A
MIN TYP. MAX UNIT
600
V
1.0
V
1.5
V
30
50
10
10
uA
1.0 mA
1.0 mA
2.5
Us
0.15 n s
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