BUK7880-55 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
View to exact match
BUK7880-55 Datasheet PDF : 12 Pages
| |||
NXP Semiconductors
BUK7880-55
N-channel TrenchMOS standard level FET
100
WDSS
(%)
80
003aaf282
60
40
20
0
20 40 60 80 100 120 140 160
T(mb) (°C)
ID = 2.5 A
Fig. 3.
Normalised drain-source non-repetitive
avalanche energy as a function of mounting-
base temperature
100
Pder
(%)
80
003aaf268
60
40
20
0
0
40
80
120
160
Tmb (°C)
Fig. 4. Normalized total power dissipation as a
function of solder point temperature
9. Thermal characteristics
Table 6.
Symbol
Rth(j-sp)
Rth(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance
from junction to solder
point
mounted on any printed-circuit board
thermal resistance
from junction to
ambient
Mounted on FR4 PCB, mounting pad
for drain 6.5 cm2
Min Typ Max Unit
-
12
15
K/W
-
120 -
K/W
102
Zth(j-mb)
(K/W)
10
1
δ = 0.5
0.2
0.1
0.05
0.02
003aaf271
P
δ=
tp
T
10- 1
0
10- 2
10- 6 10- 5
10- 4
10- 3
10- 2
tp
T
10- 1
t
1 10
tp (s)
Fig. 5. Transient thermal impedance from junction to solder point as a function of pulse duration
BUK7880-55
Product data sheet
All information provided in this document is subject to legal disclaimers.
16 March 2016
© NXP Semiconductors N.V. 2016. All rights reserved
4 / 11
Share Link: 