BUK7880-55 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
View to exact match
BUK7880-55 Datasheet PDF : 12 Pages
| |||
NXP Semiconductors
BUK7880-55
N-channel TrenchMOS standard level FET
Symbol
Parameter
Conditions
IDM
peak drain current
Tsp = 25 °C; pulsed
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
IS
source current
Tsp = 25 °C
ISM
peak source current
pulsed; Tsp = 25 °C
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
ID = 2.5 A; Vsup ≤ 25 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped
Electrostatic discharge
Vesd
electrostatic discharge voltage HBM; C = 100 pF; R = 1.5 kΩ
Min Max Unit
-
40
A
-55 150 °C
-55 150 °C
-
7.5 A
-
40
A
-
30
mJ
-
2
kV
100
ID
(%)
80
003aaf269
60
40
20
0
0
40
80
120
160
Tmb (°C)
Fig. 1. Normalized continuous drain current as a
function of solder point temperature
102
IDM
(A)
RDS(on) = VDS / ID
10
D.C.
1
003aaf270
tp = 1 µs
10 µs
100 µs
1 ms
10 ms
100 ms
10- 1
1
10
102
VDS (V)
Tsp = 25 °C; IDM is single pulse
Fig. 2. Safe operating area; continuous and peak drain
currents as a function of drain-source voltage
BUK7880-55
Product data sheet
All information provided in this document is subject to legal disclaimers.
16 March 2016
© NXP Semiconductors N.V. 2016. All rights reserved
3 / 11
Share Link: 