BUK7880-55 View Datasheet(PDF) - NXP Semiconductors.

Part Name

Description

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BUK7880-55

N-channel TrenchMOS standard level FET

NXP Semiconductors. 

BUK7880-55

N-channel TrenchMOS standard level FET

16 March 2016

Product data sheet

1. General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

2. Features and benefits

• AEC Q101 compliant

• Electrostatically robust due to integrated protection diodes

• Low conduction losses due to low on-state resistance

3. Applications

• Automotive and general purpose power switching

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

VDS

drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C

ID

drain current

Tsp = 25 °C

Ptot

total power dissipation Tsp = 25 °C; Fig. 4

Static characteristics

RDSon

drain-source on-state VGS = 10 V; ID = 5 A; Tj = 25 °C

resistance

Avalanche ruggedness

EDS(AL)S

non-repetitive drain-

source avalanche

energy

ID = 2.5 A; Vsup ≤ 25 V; RGS = 50 Ω;

VGS = 10 V; Tj(init) = 25 °C; unclamped

Min Typ Max Unit

-

-

55

V

-

-

7.5 A

-

-

8.3 W

-

65

80

mΩ

-

-

30

mJ

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