MP04HBN-16 View Datasheet(PDF) - Dynex Semiconductor
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Description
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MP04HBN-16 Datasheet PDF : 10 Pages
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MP04---590
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Symbol
Parameter
Test Conditions
Max. Units
IT(AV)
IT(RMS
ITSM
I2t
ITSM
I2t
ITSM
I2t
ITSM
I2t
Visol
Mean on-state current
Half wave resistive load
Tcase = 75˚C
595
A
Tcase = 85˚C
505
A
RMS value
Tcase = 75˚C
935
A
Surge (non-repetitive) on-current
8.3ms half sine, Tj = 125˚C
16.8
kA
I2t for fusing
V =0
R
1411 X 103 A2s
Surge (non-repetitive) on-current
8.3ms half sine, Tj = 125˚C
13.5
kA
I2t for fusing
VR = 50% VDRM
911 X 103 A2s
Surge (non-repetitive) on-current
10ms half sine, Tj = 125˚C
15.7
kA
I2t for fusing
V =0
R
1232 X 103 A2s
Surge (non-repetitive) on-current
10ms half sine, Tj = 125˚C
12.6
kA
I2t for fusing
VR = 50% VDRM
794 X 103 A2s
Isolation voltage
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
3000
V
2/10
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