DF452 View Datasheet(PDF) - Dynex Semiconductor
Part Name
Description
View to exact match
DF452 Datasheet PDF : 7 Pages
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DF452
SURGE RATINGS
Symbol
Parameter
I
Surge (non-repetitive) forward current
FSM
I2t
I2t for fusing
IFSM
Surge (non-repetitive) forward current
I2t
I2t for fusing
Conditions
10ms half sine; with 0% VRRM, Tj = 150oC
10ms half sine; with 50% VRRM, Tj = 150oC
Max. Units
5.0
kA
125 x 103 A2s
-
kA
-
A2s
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Rth(j-c) Thermal resistance - junction to case
Rth(c-h) Thermal resistance - case to heatsink
Tvj
Virtual junction temperature
Tstg
Storage temperature range
-
Clamping force
Conditions
Double side cooled
Single side cooled
Clamping force 5.0kN
with mounting compound
dc
Anode dc
Cathode dc
Double side
Single side
Forward (conducting)
Min. Max. Units
-
0.07 oC/W
- 0.133 oC/W
- 0.147 oC/W
-
0.02 oC/W
-
0.04 oC/W
-
150
oC
-55 150
oC
4.5 5.5 kN
CHARACTERISTICS
Symbol
Parameter
V
Forward voltage
FM
IRRM
Peak reverse current
t
rr
Reverse recovery time
Q
RA1
Recovered charge (50% chord)
IRM
Reverse recovery current
K
Soft factor
VTO
rT
V
FRM
Threshold voltage
Slope resistance
Forward recovery voltage
Conditions
At 750A peak, T = 25oC
case
At VRRM, Tcase = 150oC
I
F
=
200A,
di /dt
RR
=
20A/µs
T = 125oC, V = 100V
case
R
At Tvj = 150oC
At Tvj = 150oC
di/dt
=
1000A/µs,
T
j
=
125oC
Typ. Max. Units
-
1.6
V
-
40 mA
3.2
-
µs
-
35
µC
-
43
A
1.8
-
-
-
1.0
V
-
0.8 mΩ
-
-
V
2/7
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