A Product Line of
Diodes Incorporated
FZT1048A
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Collector-Base Breakdown Voltage
BVCBO
50
85
Collector-Emitter Breakdown Voltage
BVCES
50
85
Collector-Emitter Breakdown Voltage
BVCEV
50
85
Collector-Emitter Breakdown Voltage (Note 11)
BVCEO
17.5
24
Emitter-Base Breakdown Voltage
BVEBO
7
8.7
Collector Cut-off Current
ICBO
—
0.3
Collector Cut-off Current
Emitter Cut-off Current
ICES
—
0.3
IEBO
—
0.3
—
27
—
55
Collector-Emitter Saturation Voltage (Note 11)
VCE(sat)
—
155
—
250
Base-Emitter Saturation Voltage (Note 11)
Base-Emitter Turn-On Voltage (Note 11)
VBE(sat)
—
920
VBE(on)
—
880
290
440
DC Current Gain (Note 11)
300
450
hFE
180
300
50
90
Output Capacitance
Cobo
—
60
Current Gain-Bandwidth Product
fT
—
150
Switching Times
ton
—
120
toff
—
310
Note:
11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2
Max
—
—
—
—
—
10
10
10
45
75
210
350
1000
970
1200
1200
—
—
80
—
—
—
Unit
V
V
V
V
V
nA
nA
nA
mV
mV
mV
—
pF
MHz
ns
Test Condition
IC = 100µA
IC = 100µA
IC = 100µA, VEB = 1V
IC = 10mA
IE = 100µA
VCB = 35V
VCB = 35V
VEB = 4V
IC = 500mA, IB = 10mA
IC = 1A, IB = 10mA
IC = 3A, IB = 15mA
IC = 5A, IB = 25mA
IC = 5A, IB = 25mA
IC = 5A, VCE = 2V
IC = 10mA, VCE = 2V
IC = 1A, VCE = 2V
IC = 5A, VCE = 2V
IC = 20A, VCE = 2V
VCB = 10V, f = 1MHz
VCE = 10V, IC = 50mA,
f = 50MHz
IC = 4A, VCC = 10V,
IB1 = -IB2 = 40mA
FZT1048A
Document Number DS33182 Rev. 2 - 2
4 of 7
www.diodes.com
July 2014
© Diodes Incorporated