2SA1943(1995) View Datasheet(PDF) - Thinki Semiconductor Co., Ltd.
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Description
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2SA1943
(Rev.:1995)
(Rev.:1995)
Thinki Semiconductor Co., Ltd.
2SA1943 Datasheet PDF : 2 Pages
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2SA1943
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0
-230
V
VCEsat Collector-emitter saturation voltage IC=-8A IB=-0.8A
-3.0
V
VBE
Base-emitter voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=-7A ; VCE=-5V
VCB=-230V; IE=0
VEB=-5V; IC=0
-1.5
V
-5
μA
-5
μA
hFE-1
DC current gain
IC=-1A ; VCE=-5V
55
160
hFE-2
DC current gain
IC=-7A ; VCE=-5V
35
fT
Transition frequency
IC=-1A ; VCE=-5V
30
MHz
COB
Collector output capacitance
hFE-1 classifications
R
O
f=1MHz;VCB=-10V
55-110
N
R
80-160
−B−
123
Mechanical Dimensions
TO-3PL
Q
0.25 (0.010) M T B M
−T−
C
U
E
A
L
P
K
F 2 PL
W
G
J
D 3 PL
H
0.25 (0.010) M T B S
360
pF
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
A 28.0 29.0 1.102 1.142
B 19.3 20.3 0.760 0.800
C
4.7
5.3 0.185 0.209
D 0.93 1.48 0.037 0.058
E
1.9
2.1 0.075 0.083
F
2.2
2.4 0.087 0.102
G
5.45 BSC
0.215 BSC
H
2.6
3.0 0.102 0.118
J
0.43 0.78 0.017 0.031
K 17.6 18.8 0.693 0.740
L
11.2 REF
0.411 REF
N
4.35 REF
0.172 REF
P
2.2
2.6 0.087 0.102
Q
3.1
3.5 0.122 0.137
R
2.25 REF
0.089 REF
U
6.3 REF
0.248 REF
W
2.8
3.2 0.110 0.125
STYLE 2:
PIN 1.
2.
3.
BASE
COLLECTOR
EMITTER
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
Page 2/2
http://www.thinkisemi.com.tw/
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