SO2907A(2003) View Datasheet(PDF) - STMicroelectronics
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Description
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SO2907A Datasheet PDF : 4 Pages
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SO2907A
THERMAL DATA
Rthj-amb • Thermal Resistance Junction-Ambient
• Device mounted on a PCB area of 1 cm2
Max
357.1
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ICEX Collector Cut-off
VCE = -30 V
Current (VBE = -3 V)
-50
nA
IBEX Base Cut-off Current VCE = -30 V
-50
nA
(VBE = -3 V)
) ICBO
Collector Cut-off
Current (IE = 0)
VCB = -50 V
-10
nA
t(s V(BR)CEO∗ Collector-Emitter
Breakdown Voltage
uc (IB = 0)
IC = -10 mA
-60
V
d V(BR)CBO Collector-Base
ro ) Breakdown Voltage
P t(s (IE = 0)
IC = -10 µA
-60
V
lete duc V(BR)EBO
Emitter-Base
Breakdown Voltage
(IC = 0)
IE = -10 µA
-5
V
so ro VCE(sat)∗ Collector-Emitter
Saturation Voltage
IC = -150 mA IB = -15 mA
IC = -500 mA IB = -50 mA
-0.4
V
-1.6
V
b P VBE(sat)∗ Collector-Base
- O te Saturation Voltage
IC = -150 mA IB = -15 mA
IC = -500 mA IB = -50 mA
-1.3
V
-2.6
V
) le hFE∗ DC Current Gain
IC = -0.1 mA VCE = -10 V
75
t(s o IC = -1 mA VCE = -10 V
100
s IC = -10 mA VCE = -10 V
100
c b IC = -150 mA VCE = -10 V
100
300
u O IC = -500 mA VCE = -10 V
50
rod ) - fT
Transition Frequency IC = -50 mA VCE = -20V f = 100MHz 200
MHz
P t(s CCBO
Collector-Base
Capacitance
IE = 0 VCB = -10 V f = 1 MHz
8
pF
lete duc CEBO
Emitter-Base
Capacitance
IC = 0 VEB = -2 V f = 1 MHz
30
pF
so ro td
Delay Time
b P tr
Rise Time
IC = -150 mA IB = -15 mA
VCC = -30V
10
ns
40
ns
O te ton
Switching On Time
45
ns
le ts
Storage Time
otf
Fall Time
IC = -150 mA IB1 = -IB2 = -15mA
VCC = -30V
190
ns
30
ns
bstoff
Switching Off Time
O∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
220
ns
2/4
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