IRF7805PBF View Datasheet(PDF) - Infineon Technologies

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Description

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IRF7805PBF

HEXFET® Chip-Set for DC-DC Converters

Infineon Technologies 

IRF7805PbF

Fig. 1 Normalized On-Resistance

vs. Temperature

Fig. 3 Typical Rds(on) vs. Gate-to-Source Voltage

Fig. 2 Typical Gate Charge vs.

Gate-to-Source Voltage

10

TJ = 150 °C

1

TJ = 25 °C

0.1

0.4

V GS = 0 V

0.5

0.6

0.7

0.8

0.9

VSD,Source-to-Drain Voltage (V)

Fig. 4 Typical Source-Drain Diode Forward Voltage

Fig 5. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

3

2016-8-23

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