BDX67 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
View to exact match
BDX67 Datasheet PDF : 2 Pages
| |||
Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDX67
Collector-Emitter
VcEO(SUS) Sustaining Voltage
BDX67A
BDX67B
I,— -IfirirnA • I —95mH
BDX67C
VcE(sat) Collector-Emitter Saturation Voltage lc=10A;lB=40mA
VeE(on)
ICBO
ICEO
Base-Emitter On Voltage
BDX67
Collector
Cutoff Current
BDX67A
BDX67B
BDX67C
Collector Cutoff Current
lc=10A;VCE=3V
VCB= 80V; IE= 0
VcB=80V;lE=0;Tc=150'C
VCB= 100V;IE=0
Vce=100V;lE=0;Tc=1506C
VCB=120V;IE=0
VCB=120V;lE=0;Tc=150'C
VCB= 140V; IE= 0
VcB=140V;lE=0;Tc=150'C
Vce= 1/2VCEo(Max); IB=0
IEBO
Emitter Cutoff Current
VEB= 5V; lc=0
hpE-1
DC Current Gain
lc=1A;VCE=3V
hFE-2
DC Current Gain
lc= 10A; VCE=3V
hFE-3
DC Current Gain
lc=16A;VCE=3V
VECF C-E Diode Forward Voltage
!F= 10A
COB
Output Capacitance
lE=0;VcB=10V,ftes,= 1.0MHz
BDX67/A/B/C
MIN TYP. MAX UNIT
60
80
V
100
120
2.0
V
2.5
V
1.0
5.0
1.0
5.0
mA
1.0
5.0
1.0
5.0
1.0 mA
5.0 mA
5200
1000
4000
2.5
V
300
pF
Share Link: 