FM1608B View Datasheet(PDF) - Cypress Semiconductor

Part Name

Description

View to exact match

FM1608B

64-Kbit (8 K × 8) Bytewide F-RAM Memory

Cypress Semiconductor 

AC Switching Characteristics

Over the Operating Range

Parameters [2]

Cypress

Parameter

Alt Parameter

SRAM Read Cycle

tCE

tACE

tCA

–

tRC

–

tPC

–

tAS

tSA

tAH

tOE

tHZ[3, 4]

tOHZ[3, 4]

tHA

tDOE

tHZCE

tHZOE

Description

Chip enable access time

Chip enable active time

Read cycle time

Pre-charge time

Address setup time

Address hold time

Output enable access time

Chip Enable to output HI-Z

Output enable HIGH to output HI-Z

FM1608B

Min

Max

Unit

–

70

ns

70

–

ns

130

–

ns

60

–

ns

0

–

ns

15

–

ns

–

12

ns

–

15

ns

–

15

ns

Notes

2. Test conditions assume a signal transition time of 10 ns or less, timing reference levels of 0.5 × VDD, input pulse levels of 0 to 3 V, output loading of the specified

IOL/IOH and load capacitance shown in AC Test Conditions on page 8.

3. tHZ and tOHZ are specified with a load capacitance of 5 pF. Transition is measured when the outputs enter a high impedance state.

4. This parameter is characterized but not 100% tested.

Document Number: 001-86211 Rev. *C

Page 9 of 18

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