2N6338 View Datasheet(PDF) - Quanzhou Jinmei Electronic
Part Name
Description
View to exact match
2N6338 Datasheet PDF : 3 Pages
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JMnic
Product Specification
Silicon NPN Power Transistors 2N6338 2N6339 2N6340 2N6341
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N6338
V(SUS)CEO
Collector-emitter
sustaining voltage
2N6339
2N6340
IC=50mA ;IB=0
2N6341
VCEsat-1 Collector-emitter saturation voltage IC=10A; IB=1.0A
VCEsat-2 Collector-emitter saturation voltage IC=25A; IB=2.5A
VBE sat-1 Base-emitter saturation voltage
IC=10A; IB=1.0A
VBE sat-2 Base-emitter saturation voltage
IC=25A; IB=2.5A
VBE
Base-emitter on voltage
ICEX
Collector cut-off current
ICBO
Collector cut-off current
IC=10A ; VCE=2V
VCE=Rated VCEO; VEB=-1.5V
TC=150℃
VCB=Rated VCB; IE=0
2N6338 VCE= 50V,IB=0
ICEO
Collector
cut-off current
2N6339 VCE= 60V,IB=0
2N6340 VCE= 70V,IB=0
2N6341 VCE= 75V,IB=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE-1
DC current gain
IC=0.5A ; VCE=2V
hFE-2
DC current gain
IC=10A ; VCE=2V
hFE-3
DC current gain
IC=25A ; VCE=2V
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
IC=1A ; VCE=10V;f=10MHz
MIN TYP. MAX UNIT
100
120
V
140
150
1.0
V
1.8
V
1.8
V
2.5
V
1.8
V
10
μA
1.0 mA
10
μA
50
μA
100 μA
50
30
120
12
300
pF
40
MHz
2
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