2N6338 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
View to exact match
2N6338 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2N6338/6339/6340/6341
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 100V(Min)- 2N6338
= 120V(Min)- 2N6339
= 140V(Min)- 2N6340
= 160V(Min)- 2N6341
·High Switching Speed
·Low Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ IC= 10A
APPLICATIONS
·Designed for use in industrial-military power amplifier and
switching circuit applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
2N6338
120
2N6339
140
VCBO Collector-Base Voltage
V
2N6340
160
2N6341
180
2N6338
100
2N6339
120
VCEO Collector-Emitter Voltage
V
2N6340
140
2N6341
150
VEBO Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
25
A
ICM
Collector Current-Peak
50
A
IB
Base Current-Continuous
10
A
PC
Collector Power Dissipation @TC=25℃ 200
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
0.875 ℃/W
isc Website：www.iscsemi.cn
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