MJE5730 View Datasheet(PDF) - Motorola => Freescale
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MJE5730 Datasheet PDF : 6 Pages
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1.4
1.2
1.0
VBE(sat) @ IC/IB = 5.0
0.8
0.6
0.4
TJ = – 55°C
25°C
150°C
0.2
0
0.02 0.03 0.05
0.1
0.2 0.3 0.5
1.0
2.0
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Base–Emitter Voltage
MJE5730 MJE5731 MJE5731A
1.0
SECOND BREAKDOWN
0.8
DERATING
0.6
THERMAL
DERATING
0.4
0.2
0
0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (°C)
Figure 4. Normalized Power Derating
10
5.0
2.0
1.0
0.5
TC = 25°C
1.0 ms
dc
100 µs
500 µs
0.2
0.1
0.05
0.02
0.01
5.0
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT MJE5730
MJE5731
MJE5732
10
20 30 50
100
200 300 500
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 5. Forward Bias Safe Operating Area
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
vlimits are valid for duty cycles to 10% provided TJ(pk)
150_C. TJ(pk) may be calculated from the data in Fig-
ure 6. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.
1.0
0.7 D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1
0.05
0.07
0.05
0.02
0.03
0.02
0.01
SINGLE PULSE
0.01
0.01 0.02
0.1 0.2
RθJC(t) = r(t) RθJC
RθJC = 3.125°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.5 1.0 2.0
5.0 10
20
t, TIME (ms)
50 100 200
500 1 k
Figure 6. Thermal Response
Motorola Bipolar Power Transistor Device Data
3
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