BAS21T View Datasheet(PDF) - Diode Semiconductor Korea
Part Name
Description
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BAS21T Datasheet PDF : 3 Pages
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Diode Semiconductor Korea
Surface Mount Fast Switching Diode
BAS21T
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX
Reverse breakdown voltage V(BR)R
Leakage current
IR
Forward voltage
VF
Typical total capacitance
CT
Reverse recovery Time
trr
IR=100μA
VR=200V,Tj=25℃
VR=200V,Tj=100℃
IF=100mA
IF=200mA
VR=0V,f=1MHz
IF=IR=30mA,Irr=0.1*IR,RL=100Ω
250
100
15
1.0
1.25
5.0
50
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
UNIT
V
nA
μA
V
pF
ns
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