BU505 View Datasheet(PDF) - Philips Electronics

Part Name

Description

View to exact match

BU505

Silicon diffused power transistors

Philips Electronics 

Philips Semiconductors

Silicon diffused power transistors

Product specification

BU505; BU505D

DESCRIPTION

High-voltage, high-speed switching

NPN power transistor in a TO-220AB

package. The BU505D has an

integrated efficiency diode.

APPLICATIONS

• Horizontal deflection circuits of

colour television receivers.

PINNING

PIN

DESCRIPTION

1

base

2

collector; connected to

mounting base

3

emitter

MBK106

123

2

1

MBB008

3

a. BU505.

2

1

MBB077

3

b. BU505D.

Fig.1 Simplified outline (TO-220AB) and symbols.

QUICK REFERENCE DATA

SYMBOL

VCESM

VCEO

VCEsat

VF

ICsat

IC

ICM

Ptot

tf

PARAMETER

collector-emitter peak voltage

collector-emitter voltage

collector-emitter saturation

voltage

diode forward voltage

(BU505D)

collector saturation current

collector current (DC)

collector current (peak value)

total power dissipation

fall time

CONDITIONS

VBE = 0

open base

IC = 2 A; IB = 900 mA

IF = 2 A

see Fig.3

see Fig.3

Tmb ≤ 25 °C; see Fig.4

inductive load; see Fig.7

TYP.

−

−

−

MAX.

1 500

700

1

UNIT

V

V

V

−

1.8

V

−

2

A

−

2.5

A

−

4

A

−

75

W

0.9

−

µs

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-mb

thermal resistance from junction to mounting base

VALUE

1.67

UNIT

K/W

1997 Aug 13

2

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