A1700 View Datasheet(PDF) - Shenzhen Luguang Electronic Technology Co., Ltd

Part Name

Description

View to exact match

A1700

TO-251/TO-252-2L Transistor

Shenzhen Luguang Electronic Technology Co., Ltd 

1.BASE

2.COLLECTOR

3.EMITTER

2SA1700(PNP)

TO-251/TO-252-2L Transistor

TO-251

1 23

Features

High breakdown voltage

Adoption of MBIT process

Excellent hFE linearity

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

-400

V

VCEO

Collector-Emitter Voltage

-400

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current –Continuous

-0.2

A

PC

Collector Power Dissipation

1

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless

TO-252-2L

Dimensions in inches and (millimeters)

otherwise specified)

Parameter

Symbol Test conditions

MIN TYP MAX UNIT

Collector-base breakdown voltage

V(BR)CBO IC =-10µA,IE=0

-400

V

Collector-emitter breakdown voltage

V(BR)CEO IC =-1mA,IB=0

-400

V

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

V(BR)EBO

ICBO

IEBO

IE=-10µA,IC=0

VCB=-300V,IE=0

VEB=-4V,IC=0

-5

V

-0.1

µA

-0.1

µA

DC current gain

hFE

VCE=-10V,IC=-50mA

60

200

Collector-emitter saturation voltage

VCE(sat) IC=-50mA,IB=-5mA

-0.8

V

Base- emitter saturation voltage

VBE(sat) IC=-50mA,IB=-5mA

-1

V

Transition frequency

fT

VCE=-30V,IC=-10mA

70

MHz

Output Capacitance

Cob

VCB=-30V,f=1MHz

5

pF

Reverse Transfer Capacitance

Cre

VCB=-30V,f=1MHz

4

pF

Turn-on Time

Turn-off Time

ton

VCC=-150V,IB1=IB2=-5mA,RL=3KΩ

toff

0.25

µS

5

µS

CLASSIFICATION OF hFE

Rank

D

E

Range

60-120

100-200

Share Link: