BCV29 View Datasheet(PDF) - Philips Electronics
Part Name
Description
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BCV29 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN Darlington transistors
Product specification
BCV29; BCV49
FEATURES
• High current (max. 500 mA)
• Low voltage (max. 60 V)
• High DC current gain (min. 20000).
APPLICATIONS
• Preamplifier input applications.
PINNING
PIN
1
2
3
emitter
collector
base
DESCRIPTION
DESCRIPTION
NPN small-signal Darlington transistor in a surface mount
SOT89 plastic package. PNP complements: BCV28 and
BCV48.
MARKING
TYPE NUMBER
BCV29
BCV49
MARKING CODE
EF
EG
handbook, halfpage
1
2
3
Bottom view
3
2
TR1
TR2
1
MAM300
Fig.1 Simplified outline (SOT89) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
VCES
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
BCV29
BCV49
collector-emitter voltage
BCV29
BCV49
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
−
−
VBE = 0
−
−
open collector
−
−
−
−
Tamb ≤ 25 °C; note 1 −
−65
−
−65
40
V
80
V
30
V
60
V
10
V
500
mA
1
A
200
mA
1.3
W
+150
°C
150
°C
+150
°C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
1999 Apr 08
2
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