MMBT2907A View Datasheet(PDF) - Jiangsu High diode Semiconductor Co., Ltd
Part Name
Description
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MMBT2907A Datasheet PDF : 4 Pages
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MMBT2907A
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR( P NP )
Features
● Epitaxial planar die construction
● Complementary NPN Type available(MMBT2222A)
SOT- 23
Marking:
● 2F
Symbol
VCBO
VCEO
VEBO
IC
PC
RΘJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-60
-60
-5
-600
250
500
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
C
B
E
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Base cut-off current
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Delay time
Rise time
Storage time
Fall time
Symbol
Test conditions
Min
V(BR)CBO IC=-10μA,IE=0
-60
V(BR)CEO* IC=-10mA,IB=0
-60
V(BR)EBO IE=-10μA,IC=0
-5
ICBO
VCB=-50V,IE=0
IEBO
VEB=-3V, IC =0
ICEX
VCE=-30 V, VBE(off) =-0.5V
hFE(1)
VCE=-10V,IC=-150mA
100
hFE(2)
VCE=-10V,IC=-0.1mA
75
hFE(3)
VCE=-10V,IC=-1mA
100
hFE(4)
VCE=-10V,IC=-10mA
100
hFE(5)
VCE=-10V,IC=-500mA
50
VCE(sat)* IC=-150mA,IB=-15mA
VCE(sat)* IC=-500mA,IB=-50mA
VBE(sat)* IC=-150mA,IB=-15mA
VBE(sat)* IC=-500mA,IB=-50mA
fT
VCE=-20V,IC=-50mA,f=100MHz 200
td
tr
VCE=-30V,IC=-150mA,B1=-15mA
tS
VCE=-6V,IC=-150mA,
tf
IB1=- IB2=- 15mA
*Pulse test: tp≤300μs, δ≤0.02.
Typ Max Unit
V
V
V
-20
nA
-10
nA
-50
nA
300
-0.4
V
-1.6
V
-1.3
V
-2.6
V
MHz
10
ns
25
ns
225
ns
60
ns
High Diode Semiconductor
1
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