MJE18204 View Datasheet(PDF) - ON Semiconductor

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MJE18204

SWITCHMODE™ NPN Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications

ON Semiconductor 

MJE18204 MJF18204

100

TJ = 125°C

TJ = 25°C

10 TJ = – 20°C

TYPICAL STATIC CHARACTERISTICS

VCE = 1 V

100

TJ = 125°C

TJ = 25°C

10

TJ = – 20°C

VCE = 3 V

1

0.01

0.1

1

10

IC, COLLECTOR CURRENT (AMPS)

Figure 1. DC Current Gain @ 1 Volt

100

TJ = 125°C

VCE = 5 V

10 TJ = – 20°C

TJ = 25°C

1

0.01

0.1

1

10

IC, COLLECTOR CURRENT (AMPS)

Figure 3. DC Current Gain @ 5 Volts

10

IC/IB = 10

1

IC/IB = 5

0.1

TJ = 125°C

TJ = 25°C

0.01

0.01

0.1

1

10

IC, COLLECTOR CURRENT (AMPS)

Figure 5. Collector–Emitter Saturation Voltage

1

0.01

0.1

1

10

IC, COLLECTOR CURRENT (AMPS)

Figure 2. DC Current Gain @ 3 Volts

2

TJ = 25°C

4A

3A

1

2A

1.5 A

IC = 1 A

0

10

100

1000

10000

IB, BASE CURRENT (mA)

Figure 4. Collector Saturation Region

1.5

1

TJ = – 20°C

TJ = 25°C

0.5

TJ = 125°C

IC/IB = 5

IC/IB = 10

0

0.01

0.1

1

10

IC, COLLECTOR CURRENT (AMPS)

Figure 6. Base–Emitter Saturation Region

4

Motorola Bipolar Power Transistor Device Data

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