DF5A6.2JE View Datasheet(PDF) - Toshiba
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DF5A6.2JE Datasheet PDF : 3 Pages
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DF5A6.2JE
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF5A6.2JE
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
Unit: mm
* This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
z The mounting of four devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Power dissipation
Junction temperature
Storage temperature range
Symbol
P
Tj
Tstg
Rating
Unit
100
mW
150
°C
−55~150
°C
1.CATHODE1
2.ANODE
3.CATHODE2
4.CATHODE3
5.CATHODE4
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEDEC
⎯
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
JEITA
TOSHIBA
⎯
1-2W1A
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Weight: 0.003 g (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Zener voltage
Dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
VZ
ZZ
IR
CT
Test Condition
IZ = 5 mA
IZ = 5 mA
VR =3 V
VR = 0, f = 1 MHz
Min Typ. Max Unit
5.8 6.2 6.6
V
―
―
30
Ω
―
―
1.0
μA
―
55
―
pF
Guaranteed Level of ESD Immunity
Test Condition
ESD Immunity Level
IEC61000-4-2
(Contact discharge)
Criterion: No damage to device elements
± 30 kV
1
2007-11-01
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