C1875 View Datasheet(PDF) - Quanzhou Jinmei Electronic

Part Name

Description

View to exact match

C1875

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0

VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.6A

VBEsat Base-emitter saturation voltage

IC=2.5A; IB=0.6A

ICES

Collector cut-off current

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

VCE=1500V; VBE=0

VCB=1000V; IE=0

VEB=5V; IC=0

hFE-1

DC current gain

IC=0.5A ; VCE=10V

hFE-2

DC current gain

IC=2A ; VCE=10V

ts

Storage time

tf

Fall time

IC=2.5A ; IB1=-IB2=0.6A

Pw=20μs

Product Specification

2SC1875

MIN TYP. MAX UNIT

500

V

10

V

1.2

V

1.0

mA

20

μA

20

μA

10

35

5

25

10

μs

1.0

μs

2

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