B5819W View Datasheet(PDF) - Jiangsu High diode Semiconductor Co., Ltd
Part Name
Description
View to exact match
B5819W Datasheet PDF : 4 Pages
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Features
● VR 40V
● IFAV 1A
B5819W
SOD1 23 Plastic-Encapsulate Diodes
Schottky Rectifier
SOD1 23
Applications
● Low Voltage Rectification
● Low Power Consumption Applications
● High Efficiency DC/DC Conversion
Marking
● SL
HD SD0.63
Parameter
DC reverse voltage
Mean rectifying current
Non-repetitive Peak Forward Surge Current @ t=8.3ms
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VR
IO
IFSM
PD
RθJA
TJ
TSTG
Value
40
1
15
0.35
285
125
-55 ~ +150
Unit
V
A
A
W
℃/W
℃
℃
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Symbol
Test Condition
Min Type Max Unit
Reverse voltage
VBR
IR =250µA
40
50
V
IF =0.5A
0
0.42 0.50
V
Forward voltage
VF
IF =1.0A
0
0.48 0.55
V
IF =3.0A
0
0.80 0.90
V
Reverse current
IR
VR =40V
5
50
µA
Diode capacitance
CD
VR=4V, f=1MHz
50
pF
High Diode Semiconductor
1
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