MJE180 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
View to exact match
MJE180 Datasheet PDF : 4 Pages
| |||
MJE180/181/182
Low Power Audio Amplifier
Low Current High Speed Switching Applications
NPN Epitaxial Silicon Transistor
1
TO-126
1. Emitter 2.Collector 3.Base
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
: MJE180
: MJE181
: MJE182
Value
60
80
100
VCEO
Collector-Emitter Voltage : MJE180
40
: MJE181
60
: MJE182
80
VEBO
IC
ICP
IB
PC
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (Ta=25°C)
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
7
3
6
1
1.5
12.5
150
- 65 ~ 150
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCEO
Parameter
Collector -Emitter Breakdown Voltage
: MJE180
: MJE181
: MJE182
Test Condition
IC = 10mA, IB = 0
Min.
40
60
80
ICBO
Collector Cut-off Current : MJE180
: MJE181
: MJE182
: MJE180
: MJE181
: MJE182
VCB = 60V, IB = 0
VCB = 80V, IE = 0
VCB = 100V, IE = 0
VCB = 60V, IE = 0 @ TC = 150°C
VCB = 80V, IE = 0 @ TC = 150°C
VCB = 100V, IE = 0 @ TC = 150°C
IEBO
Emitter Cut-off Current
VBE = 7V, IC = 0
hFE
DC Current Gain
VCE = 1V, IC = 100mA
50
VCE = 1V, IC = 500mA
30
VCE = 1V, IC = 1.5A
12
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 500mA, IB = 50mA
IC = 1.5A, IB = 150mA
IC = 3A, IB = 600mA
VBE(sat)
Base-Emitter Saturation Voltage
IC = 1.5A, IB = 150mA
IC = 3A, IB = 600mA
VBE(on)
Base-Emitter ON Voltage
VCE = 1V, IC = 500mA
fT
Current Gain Bandwidth Product
VCE = 10V, IC = 100mA
50
Cob
Output Capacitance
VCB = 10V, IE = 0, f = 0.1MHz
Units
V
V
V
V
V
V
V
A
A
A
W
W
°C
°C
Max. Units
V
V
V
0.1 µA
0.1 µA
0.1 µA
0.1 mA
0.1 mA
0.1 mA
0.1 µA
250
0.3
V
0.9
V
1.7
V
1.5
V
2.0
V
1.2
V
MHz
30
pF
©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
Share Link: 